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MSU1000 Fitted Megasonic Cleaning System

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Description

Fitted megasonic cleaning system Megasonic cleaning technology not only preserves the advantages of ultrasonic cleaning technology, but also overcomes some of its shortcomings. The mechanism of megasonic cleaning technology is the chemical reaction of chemical cleaning agents combined with high-frequency vibration slices for cleaning. So far, the megasonic cleaning method has become the most widely used and effective method in polishing wafer cleaning. Generally, the particle size suitable for removal by megasonic cleaning is 0.1~0.3 μm, and the particle size suitable for removal by ultrasonic cleaning is above 0.4 μm. The effect of megasonic cleaning is gentler. Therefore, an appropriate vibration frequency should be selected according to the size of the particles to be removed and the impact force that the device on the wafer surface can withstand.

 

Features

• Reduced cleaning difficulty
• Increased cleaning efficiency
• Can work in multiple areas, compatible with 8″ and 12″
• Reduced chemical consumption
• No chemical pollution is generated
• No damage to the substrate surface
• Control the thickness of silicon and oxide layers
• No risk of conductive material falling off

 

Basic Specifications

• Megasonic frequency 1MHz
• Power density <2W/cm2
• Housing material PEEK
• Vibrator Material Quartz or Sapphire
• Cooling air flow 10L/min
• Liquid flow 0.5-3.0 L/min
• Applicable wafers 4″, 6″, 8″, 12″
• Liquid temperature <70°C
• Ambient temperature 10-40°C

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