FSM MC100

Electrical Measurement Techniques - Metal Contamination Testing on Production Wafers

Fully Automated Robotic Handling Tools are available for 200 mm and 300 mm fabs.

• Backside probing of in-line product wafers.
• Local mapping of metals concentration,carrier diffusion length and lifetime.
• Metal levels determined from ~3x109 to ~1x1014 atoms/cm3.
• Fully- automated testing for 200 and 300 mm wafers.
• Non-thermal metal-dopant dissociation procedure.
• 225 mapped data points per wafer.
• Options for corona charge deposition and oxide charge measurements (plasma damage characterization).

Footprint: 300/200 mm dual FOUP: 
1.16 (width) x 2.01 (Depth) m
300/200 manual loaded:
0.67 (width) x 0.92 (Depth) m 

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