Atomic Layer Deposition systems (ALD)

Atomic Layer Deposition Systems (ALD)

Atomic Layer Deposition Systems (ALD)

Basic Atomic Layer Deposition (ALD) technology concept is to deposit one atomic layer per cycle during deposition.  ALD is a surface controlled layer-by-layer process for the deposition of thin films with atomic layer accuracy which is basic fundamentals of nano-technology.  ALD is a Chemical Vapor Deposition (CVD) technique that enables surface-controlled, uniform, and conformal film growth at the atomic layer scale with excellent uniformity.  Surface-controlled film growth is a unique feature of ALD that is based on sequential, self-limiting chemical reactions between gas-phase precursor molecules and active surface species.  During a typical ALD process, at least two gas-phase precursors are pulsed sequentially into a reaction space where a substrate is located.  A complete sequence (or cycle) is made up of a series of pulse and purge steps.  Pulse steps are separated by purge steps to remove any remaining precursor and/or volatile reaction by-products from the reaction space between pulses.  The Kurt J. Lesker Company offers different ALD process equipments to fit your individual needs; ALD150LE, ALD50LX, OCTOS and LUMINOS.

 

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