Titanium Nitride (TiN) Sputtering Targets

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Description

Premier Solutions Pte Ltd is distributing Kurt J Lesker Coporation (KJLC) comprehensive offering of sputtering targets, evaporation sources and other deposition materials which  is listed by material throughout the website. Technical specifications of Titanium Nitride (TiN) Sputtering Targets and ordering information is available.  Below you may find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. Contact This email address is being protected from spambots. You need JavaScript enabled to view it. for current pricing or for a quote on sputtering targets and other deposition products not listed.

 

Specifications

Material Type Titanium Nitride   Theoretical Density (g/cc) 5.43
Symbol TiN Z Ratio **1.00
Color/Appearance Yellow-Brown, Crystalline Solid Sputter RF, RF-R
Melting Point (°C) 2,930 Max Power Density(Watts/Square Inch) 20
Type of Bond Indium

** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value.

Material Notes

  • "Indium" Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.
  • This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock

 

Ordering Table

Materials Size Purity Parts # Price
Titanium Nitride 1.00" Dia. x 0.125" Thick 99.500% EJTTINX251A2 P.O.R.
Titanium Nitride 1.00" Dia. x 0.250" Thick 99.500% EJTTINX251A4 P.O.R.
Titanium Nitride 2.00" Dia. x 0.125" Thick 99.500% EJTTINX252A2 P.O.R.
Titanium Nitride 2.00" Dia. x 0.250" Thick 99.500% EJTTINX252A4 P.O.R.
Titanium Nitride 3.00" Dia. x 0.125" Thick 99.500% EJTTINX253A2 P.O.R.
Titanium Nitride 3.00" Dia. x 0.250" Thick 99.500% EJTTINX253A4 P.O.R.
Titanium Nitride 4.00" Dia. x 0.125" Thick 99.500% EJTTINX254A2 P.O.R.
Titanium Nitride 4.00" Dia. x 0.250" Thick 99.500% EJTTINX254A4 P.O.R.

 

Bonded Assemblies Ordering Table

Material Size Purity Bonding Type Backing Plate Size Part # Price
Titanium Nitride 2.00" Dia x 0.125" Thick 0.995 Indium 2.00" Dia x 0.125" Thick EJUTINX252A4 P.O.R.
Titanium Nitride 3.00" Dia x 0.125" Thick 0.995 Indium 3.00" Dia x 0.125" Thick EJUTINX253A4 P.O.R.
Titanium Nitride 3.00" Dia x 0.125" Thick 0.999 Indium 3.00" Dia x 0.125" Thick EJUTINX303A4 P.O.R.

Material Notes:

  • "Elastomer" Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.  Elastomer is an alternative bonding method that touts a higher temperature capability over the indium bond. Elastomer bonds are recommended when customers are consistently melting indium bonds. We also recommend elastomer bonding for low melting point target materials, as well as, temperature sensitive compounds and targets that have either low density or are especially fragile. Elastomer bonding is performed at relatively low temperatures between 50°C and 100°C so it is gentler on the target during the actual bonding process. Many customers hesitate to choose the elastomer bond because they know that most polymer based materials will outgas in a vacuum chamber. The elastomer bond is actually UHV compatible and has a NASA "A" rating which means that it undergoes less than a 1% total mass change at 150°C at 1 x 10-7 Torr for 24 hours. In addition, the elastomer does not absorb any moisture and is more than suitable to handle cycles between vacuum and atmosphere.
  • This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.
  1. Attempting to ignite a plasma at low power may require a high argon gas pressure. Typically, 5E-2 Torr (6.7 Pa) is required for low power ignition. Once the plasma has stabilized, the pressure can be reduced to that normally used for sputtering the particular target material.
  2. Power to the target should be ramped up slowly through the break-in period. The rate of increase should be limited to 10 - 20 watts per minute. If the target material's properties and its response to the application of power are in doubt, choose the lower power ramp value. If arcing, voltage spikes, or other plasma irregularities occur during ramp up, stop ramping power and allow the plasma to stabilize before starting the ramp again.
  3. Since the deposition rate increases as the power density increases, the natural tendency is to use high power to speed up deposition. However, each particular target mounted in a particular sputter source will have its own heat transfer characteristics. Applying a higher power density than is acceptable results in the target overheating and subsequently fracturing and/or bond failure (if the target is bonded).
  4. When the deposition run is complete, it is equally important to ramp-down power at the same rate as the ramp-up, allowing the target to cool slowly to avoid thermal shock and the potential for target fracture. As an added precaution, allow the chamber to cool slowly to ambient temperature before venting.

 

 

Premier Solutions Pte Ltd - Titanium Nitride (TiN) Sputtering Targets -TiNST1

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